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APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG
600V 15A 0.45
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
BVFR
TO -2
47
D3PAK
SVFR
* Faster Switching * Lower Leakage
3
* Avalanche Energy Rated
D
*
FAST RECOVERY BODY DIODE
G S
* TO-247 or Surface Mount D PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT6045B_SVFR(G) UNIT Volts Amps
600 15 60 30 40 250 2.0 -55 to 150 300 15 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.45 250 1000 100 2 4
(VGS = 10V, ID = 7.5A)
Ohms A nA Volts
050-7204 Rev A 1-2010
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6045B_SVFR(G)
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 15A @ 25C VGS = 15V VDD = 300V ID = 15A @ 25C RG = 1.6 MIN TYP MAX UNIT
2600 305 125 115 15 52 10 9 38 6
3120 425 180 170 25 75 20 18 50 12
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM
SD dv /dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Reverse Recovery Time (IS = -15A, di/dt = 100A/s) Reverse Recovery Charge (IS = -15A, di/dt = 100A/s) Peak Recovery Current (IS = -15A, /dt = 100A/s)
di 1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
15 60 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -15A)
5
V
Peak Diode Recovery dv/dt
t rr Q rr IRRM
250 500 1.9 6 15 26
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.50 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 8.50mH, RG = 25, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID14A di/dt 700A/s VR 600V TJ 150C
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.5 D=0.5 , THERMAL IMPEDANCE (C/W) 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE
Note:
0.1 0.05
050-7270 Rev A 1-2010
PDM
t1 t2
JC
0.001 10-5
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10-3
Typical Performance Curves
30 ID, DRAIN CURRENT (AMPERES) VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 30 VGS=15V VGS=7V, 10V 6V
APT6045B_SVFR(G)
24 5.5V 18
24
5.5V 18
12
5V
12
5V
6
4.5V 4V
6
4.5V 4V
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0
0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.5
NORMALIZED TO V
0
24
1.4 1.3 1.2 1.1 1.0 0.9
GS
= 10V @ 7.5A
18
12 TJ = +125C TJ = +25C TJ = -55C
VGS=10V VGS=20V
6
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 ID, DRAIN CURRENT (AMPERES)
0
0
6 12 18 24 30 36 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
1.15
12
1.10
1.05
8
1.00
4
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 7.5A
D
0
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.90
-50
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-7204 Rev A
1-2010
APT6045B_SVFR(G)
100 ID, DRAIN CURRENT (AMPERES) 50
OPERATION HERE LIMITED BY R (ON) DS
10,000 10S 100S C, CAPACITANCE (pF) 5,000 Ciss
10 5
1mS
1,000 Coss 500 Crss
10mS 1 0.5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 50 50
0.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 7.5A
D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=120V VDS=300V
16
10 5
TJ =+150C
TJ =+25C
12 VDS=480V 8
1 .5
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
1-2010
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Heat Sink (Collector)
Gate Drain
and Leads are Plated
Source
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
050-7204 Rev A
Source Drain
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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